Physics Department, School of Science, South China University of Technology, Guangzhou 510640, CHN
半导体光子学与技术
2010, 16(2-3): 87
Author Affiliations
Abstract
1 School for Information and Opto-Electronic Science and Engineering, South China Normal University, Guangzhou 510631
2 Department of Applied Physics, South China University of Technology, Guangzhou 510641
3 College of Applied Physics, Guangdong University of Technology, Guangzhou 510090
Dark-current-voltage curves and photon-current-voltage curves were measured by a passive quenched circuit so that the voltage applied to the avalanche photodiode can be much higher than breakdown voltage in study on the depth of punch through. The photo-current-voltage curve indicated clearly the punch-through voltage while the dark current-voltage curve is insensitive to the punch through. Furthermore, the avalanches initiated by the photo-generated carrier at a voltage lower than that from the thermo-generated carriers and explained based on the different distribution of the carriers.
040.5570 Quantum detectors 040.3060 Infrared 040.3780 Low light level 040.5160 Photodetectors 230.5170 Photodiodes 270.5290 Photon statistics Chinese Optics Letters
2005, 3(0s): 62
Author Affiliations
Abstract
1 School for Information and Opto-Electronic Science and Engineering, South China Normal University, Guangzhou 510631
2 Department of Applied Physics, South China University of Technology, Guangzhou,510641
3 College of Applied Physics, Guangdong University of Technolody, Guangzhou 510090
The passively quenched operation of avalanche photodiode (APD) has been used to characterizing InGaAs/InP APD including punch through voltage, avalanche voltage and break down voltage that are all important in the design of APD for single photon detection. The punch through voltage at certain doping level can be related to the thickness of the InP multiplication layer and the thickness of the un-intentionally doped n-type InP layer can be adjusted in according to the experimental data. The analysis indicates that the punch through voltage should be close to the breakdown voltage that can be realized by adjusting the thickness of InP multiplication layer.
040.3060 Infrared 040.3780 Low light level 040.5570 Quantum detectors 160.1890 Detector materials 230.5160 Photodetectors 270.5570 Quantum detectors Chinese Optics Letters
2005, 3(0s): 31
